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Suppression of Spiral Growth in Molecular Beam Epitaxy of GaN on Vicinal 6H-SiC(0001)

✍ Scribed by Cui, Y. ;Li, L.

Publisher: John Wiley and Sons
Year: 2001
Tongue: English
Weight: 438 KB
Volume: 188
Category: Article
ISSN: 0031-8965
DOI: 10.1002/1521-396x(200112)188:2<583::aid-pssa583>3.0.co;2-3

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GaN films are grown by plasma-assisted molecular beam epitaxy on 6H-SiC(0001) substrates. Suitable substrate preparation and growth conditions are found which greatly improve the structural quality of the films. Threading dislocation densities of about 1 Â 10 9 cm --2 for edge dislocations and 1 Â 1

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