Growth of GaN on SiC(0001) by Molecular Beam Epitaxy

✍ Scribed by Lee, C.D. ;Sagar, Ashutosh ;Feenstra, R.M. ;Sarney, W.L. ;Salamanca-Riba, L. ;Hsu, J.W.P.

• Publisher: John Wiley and Sons
• Year: 2001
• Tongue: English
• Weight: 188 KB
• Volume: 188
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/1521-396x(200112)188:2<595::aid-pssa595>3.0.co;2-s

✦ Synopsis

GaN films are grown by plasma-assisted molecular beam epitaxy on 6H-SiC(0001) substrates. Suitable substrate preparation and growth conditions are found which greatly improve the structural quality of the films. Threading dislocation densities of about 1 Â 10 9 cm --2 for edge dislocations and 1 Â 10 7 cm --2 for screw dislocations are achieved in GaN films of 1 mm thickness grown under optimal conditions. Reverse leakage is observed near some dislocations, although the majority of dislocations do not produce leakage.