GaN films are grown by plasma-assisted molecular beam epitaxy on 6H-SiC(0001) substrates. Suitable substrate preparation and growth conditions are found which greatly improve the structural quality of the films. Threading dislocation densities of about 1 Â 10 9 cm --2 for edge dislocations and 1 Â 1
Homoepitaxial SiC Growth by Molecular Beam Epitaxy
✍ Scribed by R. S. Kern; K. Järrendahl; S. Tanaka; R. F. Davis
- Publisher
- John Wiley and Sons
- Year
- 1997
- Tongue
- English
- Weight
- 419 KB
- Volume
- 202
- Category
- Article
- ISSN
- 0370-1972
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
The structural properties as well as epitaxial growth peculiarities of thin film silicon-based heterostructures (SBH) are described with emphasis put on MBE growth of these structures. More detailed considerations are presented for the strained-layer Si 1-x Ge x /Si heterostructures. The 4.17% latti
The value of in situ monitoring to study growth dynamics and surface reaction kinetics in a gas source molecular beam epitaxy process is illustrated with reference to the growth of Si ®lms on Si(001) substrates using a beam of disilane (Si 2 H 6 ). By using a combination of re¯ection high-energy ele
a), T. Kawanishi (b), K. Sakurai (b), S.-W. Kim (b), K. Maejima (b), Sz. Fujita (b, c), and Sg. Fujita (b) (a) Venture Business