๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Molecular Beam Epitaxial Growth of Topological Insulators

โœ Scribed by Xi Chen; Xu-Cun Ma; Ke He; Jin-Feng Jia; Qi-Kun Xue


Publisher
John Wiley and Sons
Year
2011
Tongue
English
Weight
318 KB
Volume
23
Category
Article
ISSN
0935-9648

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Homoepitaxial SiC Growth by Molecular Be
โœ R. S. Kern; K. Jรคrrendahl; S. Tanaka; R. F. Davis ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 419 KB ๐Ÿ‘ 1 views
Growth of GaN on SiC(0001) by Molecular
โœ Lee, C.D. ;Sagar, Ashutosh ;Feenstra, R.M. ;Sarney, W.L. ;Salamanca-Riba, L. ;Hs ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 188 KB ๐Ÿ‘ 1 views

GaN films are grown by plasma-assisted molecular beam epitaxy on 6H-SiC(0001) substrates. Suitable substrate preparation and growth conditions are found which greatly improve the structural quality of the films. Threading dislocation densities of about 1 ร‚ 10 9 cm --2 for edge dislocations and 1 ร‚ 1

In situ studies of epitaxial silicon gro
โœ B. A. Joyce; J. Zhang; A. G. Taylor; M. H. Xie; J. M. Fernรกndez; A. K. Lees ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 297 KB

The value of in situ monitoring to study growth dynamics and surface reaction kinetics in a gas source molecular beam epitaxy process is illustrated with reference to the growth of Si ยฎlms on Si(001) substrates using a beam of disilane (Si 2 H 6 ). By using a combination of reยฏection high-energy ele

Silicon-Based Heterostructures: Strained
โœ M. A. Herman ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 183 KB ๐Ÿ‘ 1 views

The structural properties as well as epitaxial growth peculiarities of thin film silicon-based heterostructures (SBH) are described with emphasis put on MBE growth of these structures. More detailed considerations are presented for the strained-layer Si 1-x Ge x /Si heterostructures. The 4.17% latti