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Silicon-Based Heterostructures: Strained-Layer Growth by Molecular Beam Epitaxy

โœ Scribed by M. A. Herman

Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
183 KB
Volume
34
Category
Article
ISSN
0232-1300

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โœฆ Synopsis

The structural properties as well as epitaxial growth peculiarities of thin film silicon-based heterostructures (SBH) are described with emphasis put on MBE growth of these structures. More detailed considerations are presented for the strained-layer Si 1-x Ge x /Si heterostructures. The 4.17% lattice mismatch between Si and Ge is the reason for considering the Si-based heteroepitaxy realised with the Si 1-x Ge x alloy as strained-layer epitaxy. Consequently, the effects of strain on epitaxial growth and on properties of Si 1-x Ge x /Si heterostructures are also described and discussed in this paper. The review is concluded with a discussion on key issues concerning the important 2D layer-by-layer growth mode in strained-layer MBE of SBHs. The considerations are based on current understanding of physical principles of epitaxial growth of these thin film structures.

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