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High Efficiency and Long-Lived Green and Blue Light Emitting Diodes Based on ZnSSe:Te Active Layer Grown by Molecular Beam Epitaxy

✍ Scribed by H.C. Lee; N. Kaneko; M. Watanabe; Y. Fujita; T. Abe; H. Ishikura; M. Adachi; H. Kasada; K. Ando

Publisher: John Wiley and Sons
Year: 2002
Tongue: English
Weight: 106 KB
Volume: 229
Category: Article
ISSN: 0370-1972
DOI: 10.1002/1521-3951(200201)229:2<1043::aid-pssb1043>3.0.co;2-9

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✦ Synopsis

Bright green and blue light emitting diodes have been developed based on ZnSSe : Te active layer, with high crystal quality and a close lattice-match to GaAs substrate. The green LEDs exhibit a fairly long lifetime (>2000 h) at room temperature, which is attributable to the crystal-hardening effect by Te-doping. The devices show slow-mode degradation due to the gradual enhancement of microscopic defects in p-ZnMgSSe cladding layer. No detectable changes in dark-spot and darkline formation due to macroscopic defects are observed during device operation.

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