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In situ studies of epitaxial silicon growth by gas source molecular beam epitaxy

✍ Scribed by B. A. Joyce; J. Zhang; A. G. Taylor; M. H. Xie; J. M. Fernández; A. K. Lees

Publisher
John Wiley and Sons
Year
1997
Tongue
English
Weight
297 KB
Volume
7
Category
Article
ISSN
1616-301X

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✦ Synopsis

The value of in situ monitoring to study growth dynamics and surface reaction kinetics in a gas source molecular beam epitaxy process is illustrated with reference to the growth of Si ®lms on Si(001) substrates using a beam of disilane (Si 2 H 6 ). By using a combination of re¯ection high-energy electron diraction (RHEED) and re¯ection anisotropy spectroscopy (RAS), we show ®rst how morphological (long-range order) and local electronic structure eects can be separated in the evaluation of growth dynamics. This involves the measurement of step density changes by RHEED concomitantly with the variation in domain coverage on the Si(001) (26 1) + ( 162) reconstructed surface by RAS. This approach is then extended to investigate the kinetics of hydrogen desorption, which is the rate-limiting step in Si growth from Si 2 H 6 . It is shown that over a signi®cant temperature range, zeroth-order kinetics are obeyed and this is explained on the basis of a step-mediated desorption process. Finally we show how this in¯uences the growth rate on substrates of diering degrees of vicinality.

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