Surface hydrogen and growth mechanisms of synchrotron radiation-assisted silicon gas source molecular beam epitaxy using disilane
✍ Scribed by Akitaka Yoshigoe; Shinya Hirano; Tsuneo Urisu
- Publisher
- John Wiley and Sons
- Year
- 1998
- Tongue
- English
- Weight
- 96 KB
- Volume
- 12
- Category
- Article
- ISSN
- 0268-2605
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✦ Synopsis
Surface hydrogen and growth mechanisms are investigated for synchrotron radiation (SR)assisted gas source molecular beam epitaxy (SR-GSMBE) using Si 2 H 6 on the Si(100) surface in the low-temperature region. The surface silicon hydrides (deuterides) are monitored in situ during the epitaxial growth by means of infrared reflection absorption spectroscopy with a Si(100) substrate and a CoSi 2 buried metal layer. It is concluded that the chemisorption of gas-phase reactive species such as SiH n and H generated by SR irradiation and the subsequent hydrogen desorption are the key mechanisms of SR-GSMBE at low substrate temperatures.