Growth Activation of ZnO Layers with H2O Vapor ona-Face of Sapphire Substrate by Metalorganic Molecular-Beam Epitaxy
✍ Scribed by Ashrafi, A.B.M.A. ;Suemune, I. ;Kumano, H. ;Uesugi, K.
- Publisher
- John Wiley and Sons
- Year
- 2002
- Tongue
- English
- Weight
- 117 KB
- Volume
- 192
- Category
- Article
- ISSN
- 0031-8965
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✦ Synopsis
H 2 O vapor-activated ZnO layers have been grown on the a-face of sapphire substrates. The grown ZnO layers revealed a crystalline orientation of c-face ZnO k a-face sapphire. For the II/VI flux ratio of 14, the ZnO layers showed a bandedge luminescence with the emission energy of 3.376 and 3.304 eV at 17 K and room temperature, respectively. The amount of the blue-shifted energy in the Zn-rich ZnO is estimated to be $30 meV in comparison to the donor-bound exciton emission reported previously. The energy shifting towards the higher level could be attributed to the drastic reduction of carrier concentration in the order of $10 17 cm --3 for the II/VI flux ratio of 14. With this growth condition, electron mobility is recorded typically to be $90 cm 2 /Vs which is considerably higher for the same carrier concentrations reported previously with plasma as oxygen source.