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Growth and Characterisation of High Electron Mobility Transistors on 4H-SiC by Ammonia Molecular Beam Epitaxy

✍ Scribed by Webb, J. ;Tang, Haipeng ;Bardwell, J.A. ;Rolfe, S. ;Liu, Ying ;Lapointe, J. ;Marshall, P. ;MacElwee, T.W.

Publisher: John Wiley and Sons
Year: 2001
Tongue: English
Weight: 95 KB
Volume: 188
Category: Article
ISSN: 0031-8965
DOI: 10.1002/1521-396x(200111)188:1<271::aid-pssa271>3.0.co;2-t

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