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Indium Surface Segregation during Growth of (In,Ga)N/GaN Multiple Quantum Wells by Plasma-Assisted Molecular Beam Epitaxy

โœ Scribed by P. Waltereit; O. Brandt; K.H. Ploog; M.A. Tagliente; L. Tapfer


Publisher
John Wiley and Sons
Year
2001
Tongue
English
Weight
94 KB
Volume
228
Category
Article
ISSN
0370-1972

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Growth and Characterization of InGaN/GaN
โœ X.Q. Shen; T. Ide; M. Shimizu; F. Sasaki; H. Okumura ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 101 KB ๐Ÿ‘ 2 views

InGaN/GaN multiple quantum-wells (MQWs) on Ga-polarity GaN by plasma-assisted molecularbeam epitaxy were grown and characterized. In-situ reflection high-energy-electron diffraction observations and high-resolution X-ray diffraction results indicated that a flat interface and a good periodicity of t