Plasmas for the Low-Temperature Growth of High-Quality GaN Films by Molecular Beam Epitaxy and Remote Plasma MOCVD

Temperature Dependence of the Photorefle

Temperature Dependence of the Photoreflectance Lineshape for GaN Films Grown by Molecular Beam Epitaxy

✍ Behn, U. ;Thamm, A. ;Brandt, O. ;Grahn, H.T. 📂 Article 📅 2000 🏛 John Wiley and Sons 🌐 English ⚖ 101 KB 👁 2 views

The photoreflectance (PR) lineshape of GaN films grown by molecular beam epitaxy was investigated in the temperature range of 10 to 400 K. At low temperatures, the lineshape is dominated by excitonic transitions and can be reasonably well fitted using the first derivative of a Gaussianbroadened osci