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Polarity, Morphology and Reactivity of Epitaxial GaN Films on Al2O3(0001)

✍ Scribed by Starke, U. ;Sloboshanin, S. ;Tautz, F.S. ;Seubert, A. ;Schaefer, J.A.


Publisher
John Wiley and Sons
Year
2000
Tongue
English
Weight
352 KB
Volume
177
Category
Article
ISSN
0031-8965

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Infrared reflectance studies of GaN epit
✍ Feng, Z. C.; Hou, Y. T.; Chua, S. J.; Li, M. F. πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 107 KB πŸ‘ 1 views

Infrared reflectivity measurements were performed on undoped and Si-doped GaN films grown on sapphire. After analysing the substrate reflectance accurately, a good fit to the measured reflectance has been achieved. By comparison of the measured and calculated spectra, it becomes possible to identify