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Photoluminescence Investigations of AlGaN on GaN Epitaxial Films

✍ Scribed by B.K. Meyer; G. Steude; A. Göldner; A. Hoffmann; H. Amano; I. Akasaki


Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
183 KB
Volume
216
Category
Article
ISSN
0370-1972

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Infrared reflectance studies of GaN epit
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Infrared reflectivity measurements were performed on undoped and Si-doped GaN films grown on sapphire. After analysing the substrate reflectance accurately, a good fit to the measured reflectance has been achieved. By comparison of the measured and calculated spectra, it becomes possible to identify