Photoreflectance Spectroscopy Investigation of GaN–AlGaN Quantum Well Structures
✍ Scribed by T.J. Ochalski; B. Gil; T. Bretagnon; P. Lefebvre; N. Grandjean; J. Massies; M. Leroux
- Publisher
- John Wiley and Sons
- Year
- 1999
- Tongue
- English
- Weight
- 160 KB
- Volume
- 216
- Category
- Article
- ISSN
- 0370-1972
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
We have investigated electron Hall mobility of high-quality GaN/AlGaN multiple quantum wells (QWs). Electron mobility was enhanced from 875 to 1600 cm 2 /Vs at room temperature in GaN/Al 0.58 Ga 0.42 N QWs when the number of QWs increased from 1 to 10. Atomic force microscopy analysis shows that the
We studied the development of V-shaped defects in GaInN±GaN quantum well superlattices. We observed that these defects could not be suppressed by varying growth parameters like strain, In content, GaInN growth temperature etc. However, perfect superlattices without such defects could be grown by cyc