Structure Dependence of Electron Mobility in GaN/AlGaN Multiple Quantum Wells

✍ Scribed by Hoshino, K. ;Someya, T. ;Arakawa, Y.

• Publisher: John Wiley and Sons
• Year: 2001
• Tongue: English
• Weight: 95 KB
• Volume: 188
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/1521-396x(200112)188:2<877::aid-pssa877>3.0.co;2-g

✦ Synopsis

We have investigated electron Hall mobility of high-quality GaN/AlGaN multiple quantum wells (QWs). Electron mobility was enhanced from 875 to 1600 cm 2 /Vs at room temperature in GaN/Al 0.58 Ga 0.42 N QWs when the number of QWs increased from 1 to 10. Atomic force microscopy analysis shows that the multilayered QWs blocks the threading dislocations and results in improved quality of the GaN/Al 0.58 Ga 0.42 N heterointerfaces, thus enhancing the electron Hall mobility. The dependence of electron mobility and the root-mean-square surface roughness (obtained by atomic force microscopy) on well width shows that mobility is mainly dominated by interface roughness scattering processes in quantum wells less than 4 nm thick.