Structure Dependence of Electron Mobilit
โ
Hoshino, K. ;Someya, T. ;Arakawa, Y.
๐
Article
๐
2001
๐
John Wiley and Sons
๐
English
โ 95 KB
๐ 2 views
We have investigated electron Hall mobility of high-quality GaN/AlGaN multiple quantum wells (QWs). Electron mobility was enhanced from 875 to 1600 cm 2 /Vs at room temperature in GaN/Al 0.58 Ga 0.42 N QWs when the number of QWs increased from 1 to 10. Atomic force microscopy analysis shows that the