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Recombination Dynamics in GaN/AlGaN Quantum Wells: The Role of Built-in Fields

✍ Scribed by Alderighi, D. ;Vinattieri, A. ;Kudrna, J. ;Colocci, M. ;Reale, A. ;Kokolakis, G. ;Di Carlo, A. ;Lugli, P. ;Semond, F. ;Grandjean, N. ;Massies, J.

Publisher
John Wiley and Sons
Year
2001
Tongue
English
Weight
118 KB
Volume
188
Category
Article
ISSN
0031-8965

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✦ Synopsis

D. Alderighi (a), A. Vinattieri (a), J. Kudrna (a), M. Colocci (a), A. Reale (b), G. Kokolakis (b), A. Di Carlo (b), P. Lugli (b), F. Semond (c), N. Grandjean (c), and J. Massies (c)

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We have investigated electron Hall mobility of high-quality GaN/AlGaN multiple quantum wells (QWs). Electron mobility was enhanced from 875 to 1600 cm 2 /Vs at room temperature in GaN/Al 0.58 Ga 0.42 N QWs when the number of QWs increased from 1 to 10. Atomic force microscopy analysis shows that the