An InGaN/GaN multiple quantum well structure grown by low pressure MOCVD on c-Al 2 O 3 substrate is investigated using spectral-time-resolved cathodoluminescence microscopy (CL). At 6 K the laterally integrated CL spectrum shows a very efficient blue emission from the InGaN multiple quantum well cen
Energy Diagram and Recombination Mechanisms in InGaN/AlGaN/GaN Heterostructures with Quantum Wells
β Scribed by A.E. Yunovich; V.E. Kudryashov
- Publisher
- John Wiley and Sons
- Year
- 2001
- Tongue
- English
- Weight
- 195 KB
- Volume
- 228
- Category
- Article
- ISSN
- 0370-1972
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