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Impact of Internal Electric Field and Localization Effect on Quantum Well Excitons in AlGaN/GaN/InGaN Light Emitting Diodes

โœ Scribed by Chichibu, S.F. ;Sota, T. ;Wada, K. ;Brandt, O. ;Ploog, K.H. ;DenBaars, S.P. ;Nakamura, S.

Publisher
John Wiley and Sons
Year
2001
Tongue
English
Weight
151 KB
Volume
183
Category
Article
ISSN
0031-8965

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