D. Alderighi (a), A. Vinattieri (a), J. Kudrna (a), M. Colocci (a), A. Reale (b), G. Kokolakis (b), A. Di Carlo (b), P. Lugli (b), F. Semond (c), N. Grandjean (c), and J. Massies (c)
Effects of Built-in Polarization Field on the Optical Properties of AlGaN/GaN Quantum Wells
✍ Scribed by Grandjean, N. ;Damilano, B. ;Dalmasso, S. ;Leroux, M. ;Laügt, M. ;Massies, J.
- Publisher
- John Wiley and Sons
- Year
- 1999
- Tongue
- English
- Weight
- 217 KB
- Volume
- 176
- Category
- Article
- ISSN
- 0031-8965
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We report the results of calculations for the energies of confined electrons and holes and their wavefunction overlap in In x Ga 1--x N/GaN quantum wells (QWs) with an indium concentration of x = 15% in the well material. It is known that the observed increase in the photoluminescence lifetime with
The paper investigates the optical properties of InGaN/GaN single quantum well and multiple quantum well structures. For the multiple quantum well structure, we investigated the thickness dependence of the optical properties. Based on these studies, this paper presents 1. for the single quantum well