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Quantum and Transport Mobilities of Electrons in GaAs/Ga1−xAlxAs Multiple Quantum Wells

✍ Scribed by M. Cankurtaran; H. Çelik; E. Tiras; A. Bayrakli; N. Balkan

Publisher
John Wiley and Sons
Year
1998
Tongue
English
Weight
215 KB
Volume
207
Category
Article
ISSN
0370-1972

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We have investigated electron Hall mobility of high-quality GaN/AlGaN multiple quantum wells (QWs). Electron mobility was enhanced from 875 to 1600 cm 2 /Vs at room temperature in GaN/Al 0.58 Ga 0.42 N QWs when the number of QWs increased from 1 to 10. Atomic force microscopy analysis shows that the