Two-Component Photoluminescence Decay in InGaN/GaN Multiple Quantum Well Structures
β Scribed by Shih-Wei Feng; Yung-Chen Cheng; Chi-Chih Liao; Yi-Yin Chung; Chih-Wen Liu; Chih-Chung Yang; Yen-Sheng Lin; Kung-Jeng Ma; Jen-Inn Chyi
- Publisher
- John Wiley and Sons
- Year
- 2001
- Tongue
- English
- Weight
- 93 KB
- Volume
- 228
- Category
- Article
- ISSN
- 0370-1972
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π SIMILAR VOLUMES
An InGaN/GaN multiple quantum well structure grown by low pressure MOCVD on c-Al 2 O 3 substrate is investigated using spectral-time-resolved cathodoluminescence microscopy (CL). At 6 K the laterally integrated CL spectrum shows a very efficient blue emission from the InGaN multiple quantum well cen
The photoluminescence (PL) dynamics of InGaN/GaN quantum wells with different In concentrations x In have been measured. The PL emission forms a broad band consisting of two parts with dramatically different dynamics. The high energy part (QW H ) is present only under higher excitation densities (>1