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Characterization of InGaN/GaN Multiple Quantum Well Structures. Application to LEDs

✍ Scribed by Huet, F. ;di Forte-Poisson, M. A. ;Romann, A. ;Tordjman, M. ;di Persio, J.


Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
193 KB
Volume
176
Category
Article
ISSN
0031-8965

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An InGaN/GaN multiple quantum well structure grown by low pressure MOCVD on c-Al 2 O 3 substrate is investigated using spectral-time-resolved cathodoluminescence microscopy (CL). At 6 K the laterally integrated CL spectrum shows a very efficient blue emission from the InGaN multiple quantum well cen