The photoluminescence (PL) dynamics of InGaN/GaN quantum wells with different In concentrations x In have been measured. The PL emission forms a broad band consisting of two parts with dramatically different dynamics. The high energy part (QW H ) is present only under higher excitation densities (>1
โฆ LIBER โฆ
Structural and Optical Characteristics of InGaN/GaN Multiple Quantum Wells with Different Growth Interruption
โ Scribed by H.K. Cho; J.Y. Lee; N. Sharma; J. Humphreys; G.M. Yang; C.S. Kim
- Publisher
- John Wiley and Sons
- Year
- 2001
- Tongue
- English
- Weight
- 126 KB
- Volume
- 228
- Category
- Article
- ISSN
- 0370-1972
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