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Growth Optimisation of GaInN/GaN Multiple Quantum Well Structures: Application to RCLED Devices

✍ Scribed by Di Forte-Poisson, M.A. ;Romann, A. ;Tordjman, M. ;Magis, M. ;di Persio, J.


Publisher
John Wiley and Sons
Year
2002
Tongue
English
Weight
294 KB
Volume
192
Category
Article
ISSN
0031-8965

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GaN on Si(111): From Growth Optimization
✍ F. Semond; B. Damilano; S. VΓ©zian; N. Grandjean; M. Leroux; J. Massies πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 171 KB πŸ‘ 1 views

In this paper, we report on the growth of GaN films and AlGaN/GaN multiple quantum wells (MQWs) on Si(111) substrates by molecular beam epitaxy using ammonia as nitrogen source. A smooth layer-by-layer two-dimensional growth mode allows to obtain reflection high-energy electron diffraction intensity