Phonon-Assisted Photoluminescence in InGaN/GaN Multiple Quantum Wells
โ Scribed by P.P. Paskov; P.O. Holtz; B. Monemar; S. Kamiyama; M. Iwaya; H. Amano; I. Akasaki
- Publisher
- John Wiley and Sons
- Year
- 2002
- Tongue
- English
- Weight
- 177 KB
- Volume
- 234
- Category
- Article
- ISSN
- 0370-1972
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
The photoluminescence (PL) dynamics of InGaN/GaN quantum wells with different In concentrations x In have been measured. The PL emission forms a broad band consisting of two parts with dramatically different dynamics. The high energy part (QW H ) is present only under higher excitation densities (>1
We present the first experimental study of the exciton spin relaxation dynamics in InGaN/GaN multiple quantum well structures after quasi-resonant picosecond excitation with linearly polarized light. Whereas short spin-relaxation times are generally expected in GaN-based bulk structures, for multipl