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Slow Spin Relaxation Observed in InGaN/GaN Multiple Quantum Wells

✍ Scribed by M. Julier; A. Vinattieri; M. Colocci; P. Lefebvre; B. Gil; D. Scalbert; C.A. Tran; R.F. Karlicek Jr.; J.-P. Lascaray

Publisher: John Wiley and Sons
Year: 1999
Tongue: English
Weight: 175 KB
Volume: 216
Category: Article
ISSN: 0370-1972
DOI: 10.1002/(sici)1521-3951(199911)216:1<341::aid-pssb341>3.0.co;2-3

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✦ Synopsis

We present the first experimental study of the exciton spin relaxation dynamics in InGaN/GaN multiple quantum well structures after quasi-resonant picosecond excitation with linearly polarized light. Whereas short spin-relaxation times are generally expected in GaN-based bulk structures, for multiple quantum well structures we found long spin-relaxation times, around 100 ps, when the indium content was not too high. Our results suggest that the energy relaxation toward the radiative state can preserve the linear polarization of the exciton.

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