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2DEG Characteristics of AlN/GaN Heterointerface on Sapphire Substrates Grown by Plasma-Assisted MBE

✍ Scribed by K. Jeganathan; T. Ide; S.X.Q. Shen; M. Shimizu; H. Okumura

Publisher: John Wiley and Sons
Year: 2001
Tongue: English
Weight: 83 KB
Volume: 228
Category: Article
ISSN: 0370-1972
DOI: 10.1002/1521-3951(200111)228:2<613::aid-pssb613>3.0.co;2-u

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