Properties of Homoepitaxial and Heteroep
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SΓ‘nchez-GarcΓa, M. A. ;Naranjo, F. B. ;Pau, J. L. ;JimΓ©nez, A. ;Calleja, E. ;MuΓ±
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Article
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1999
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John Wiley and Sons
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English
β 302 KB
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This work presents a comparative study of the growth by plasma-assisted molecular beam epitaxy (MBE) of GaN layers on four different substrates: Si(111), Al 2 O 3 (0001), GaN/Al 2 O 3 and ELOG GaN/Al 2 O 3 templates. Optimization of the growth parameters for the case of growth of GaN layers on silic