Interpretation of the Temperature-Dependent Transport Properties of GaN/Sapphire Films Grown by MBE and MOCVD
โ Scribed by Harris, J. J. ;Lee, K. J. ;Harrison, I. ;Flannery, L. B. ;Korakakis, D. ;Cheng, T. S. ;Foxon, C. T. ;Bougrioua, Z. ;Moerman, I. ;Van der Stricht, W. ;Thrush, E. J. ;Hamilton, B. ;Ferhah, K.
- Publisher
- John Wiley and Sons
- Year
- 1999
- Tongue
- English
- Weight
- 142 KB
- Volume
- 176
- Category
- Article
- ISSN
- 0031-8965
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
The photoreflectance (PR) lineshape of GaN films grown by molecular beam epitaxy was investigated in the temperature range of 10 to 400 K. At low temperatures, the lineshape is dominated by excitonic transitions and can be reasonably well fitted using the first derivative of a Gaussianbroadened osci
A. Georgakilas 1 ) (a, b), M. Androulidaki (a), K. Tsagaraki (a), K. Amimer (a), G. Constantinidis (a), N.T. Pelekanos (c), M. Calamiotou (d), Zs. Czigany (e), and B. Pecz (e)