Structural Defects of Cubic InGaN/GaN Heterostructure Grown on GaAs(001) Substrate by MOVPE Y. Taniyasu 1 ) (a), Y. Watanabe (a), D. H. Lim (a), A. W. Jia (a), M. Shimotomai (a), Y. Kato (a), M. Kobayashi (a), A. Yoshikawa (a), and K. Takahashi (b)
Influence of MBE Growth Temperature on the Properties of Cubic GaN Grown Directly on GaAs Substrates
β Scribed by Georgakilas, A. ;Androulidaki, M. ;Tsagaraki, K. ;Amimer, K. ;Constantinidis, G. ;Pelekanos, N. T. ;Calamiotou, M. ;Czigany, Zs. ;Pecz, B.
- Publisher
- John Wiley and Sons
- Year
- 1999
- Tongue
- English
- Weight
- 183 KB
- Volume
- 176
- Category
- Article
- ISSN
- 0031-8965
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β¦ Synopsis
A. Georgakilas 1 ) (a, b), M. Androulidaki (a), K. Tsagaraki (a), K. Amimer (a), G. Constantinidis (a), N.T. Pelekanos (c), M. Calamiotou (d), Zs. Czigany (e), and B. Pecz (e)
π SIMILAR VOLUMES
Selective growth of cubic GaN on patterned GaAs substrates was studied. The structural and morphological properties of cubic GaN are very dependent on the orientation of the mask stripes. In the case of window stripe opening along [011] direction, (111)B facets were clearly observed in all the sampl