Large periphery Al 0.25 Ga 0.75 N/GaN-HEMTs on SiC-substrates are fabricated on a 2-inch process line using stepper lithography. DC characteristics reveal current densities above 1.2 A/mm and intrinsic transconductances of 360 mS/mm. Depending on device size the maximum frequency of oscillation f ma
β¦ LIBER β¦
Potentialities of GaN-Based Microcavities Grown on Silicon Substrates
β Scribed by Antoine-Vincent, N. ;Natali, F. ;Semond, F. ;Leroux, M. ;Grandjean, N. ;Massies, J. ;Leymarie, J. ;Vasson, A.
- Publisher
- John Wiley and Sons
- Year
- 2001
- Tongue
- English
- Weight
- 96 KB
- Volume
- 188
- Category
- Article
- ISSN
- 0031-8965
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A. Georgakilas 1 ) (a, b), M. Androulidaki (a), K. Tsagaraki (a), K. Amimer (a), G. Constantinidis (a), N.T. Pelekanos (c), M. Calamiotou (d), Zs. Czigany (e), and B. Pecz (e)