Investigation of InGaN/GaN Quantum Wells Grown on Sapphire and Bulk GaN Substrates
β Scribed by T. Sugahara; S. Sakai; M. Lachab; R.S.Q. Fareed; S. Tottori; T. Wang
- Publisher
- John Wiley and Sons
- Year
- 1999
- Tongue
- English
- Weight
- 236 KB
- Volume
- 216
- Category
- Article
- ISSN
- 0370-1972
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π SIMILAR VOLUMES
Optical anisotropy in the growth plane has been observed by reflectance and photoluminescence (PL) spectroscopy on nitride epilayers grown on A-plane sapphire. This anisotropy results from the strongly anisotropic thermal strain which is such that the wurtzite symmetry goes from C 6v to C 2v . Time-
The paper investigates the optical properties of InGaN/GaN single quantum well and multiple quantum well structures. For the multiple quantum well structure, we investigated the thickness dependence of the optical properties. Based on these studies, this paper presents 1. for the single quantum well