CW and Time-Resolved Optical Spectroscopy of GaN Epilayers and GaN–AlGaN Quantum Wells Grown on A-Plane Sapphire

✍ Scribed by M. Gallart; T. Taliercio; A. Alemu; P. Lefebvre; B. Gil; J. Allègre; H. Mathieu; S. Nakamura

• Publisher: John Wiley and Sons
• Year: 1999
• Tongue: English
• Weight: 172 KB
• Volume: 216
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/(sici)1521-3951(199911)216:1<365::aid-pssb365>3.0.co;2-g

✦ Synopsis

Optical anisotropy in the growth plane has been observed by reflectance and photoluminescence (PL) spectroscopy on nitride epilayers grown on A-plane sapphire. This anisotropy results from the strongly anisotropic thermal strain which is such that the wurtzite symmetry goes from C 6v to C 2v . Time-resolved PL reveals less marked anisotropy for PL decay times, due to the contributions of both radiative and non-radiative recombination channels. Nevertheless, by using a multilevel modelling of the time-dependent PL accounting for the optical anisotropy, we are able to separate the two types of recombinations. Last, we present cw and time-resolved PL results on GaN±AlGaN single quantum wells grown on A-face sapphire.