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Time-Resolved Spectroscopy of MBE-Grown InGaN/GaN Self-Formed Quantum Dots

✍ Scribed by Morel, A. ;Gallart, M. ;Taliercio, T. ;Lefebvre, P. ;Gil, B. ;All�gre, J. ;Mathieu, H. ;Damilano, B. ;Grandjean, N. ;Massies, J.


Publisher
John Wiley and Sons
Year
2000
Tongue
English
Weight
99 KB
Volume
180
Category
Article
ISSN
0031-8965

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Optical anisotropy in the growth plane has been observed by reflectance and photoluminescence (PL) spectroscopy on nitride epilayers grown on A-plane sapphire. This anisotropy results from the strongly anisotropic thermal strain which is such that the wurtzite symmetry goes from C 6v to C 2v . Time-