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AlGaN/GaN dual-gate high electron mobility transistors on SiC substrates for high-power mixers

✍ Scribed by K. Shiojima; T. Makimura; T. Kosugi; S. Sugitani; N. Shigekawa; H. Ishikawa; T. Egawa

Publisher: John Wiley and Sons
Year: 2005
Tongue: English
Weight: 120 KB
Volume: 2
Category: Article
ISSN: 1862-6351
DOI: 10.1002/pssc.200461347

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