Dual-gate AlGaN/GaN high-electron-mobility transistors with short gate length for high-power mixers

✍ Scribed by K. Shiojima; T. Makimura; T. Maruyama; T. Kosugi; T. Suemitsu; N. Shigekawa; M. Hiroki; H. Yokoyama

• Publisher: John Wiley and Sons
• Year: 2006
• Tongue: English
• Weight: 189 KB
• Volume: 3
• Category: Article
• ISSN: 1862-6351
• DOI: 10.1002/pssc.200564104