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Numerical performance evaluation of AlGaN/GaN high electron mobility transistors including gate length effects

✍ Scribed by Z. Hashempour; A. Asgari; S. Nikipar; M. Abolhasani; M. Kalafi

Publisher: Elsevier Science
Year: 2009
Tongue: English
Weight: 423 KB
Volume: 41
Category: Article
ISSN: 1386-9477
DOI: 10.1016/j.physe.2009.04.026

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## Abstract In this work, a comprehensive analytical model for AlGaN/GaN MISHFET has been presented to evaluate the drain current characteristics, transconductance, and cut‐off frequency of the insulated device. The model takes into account polynomial dependence of sheet carrier density on position