Low 1/f Noise in AlGaN/GaN HFETs on SiC
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Rumyantsev, S. ;Levinshtein, M. E. ;Gaska, R. ;Shur, M. S. ;Khan, A. ;Yang, J. W
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Article
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1999
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John Wiley and Sons
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English
โ 139 KB
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Experimental results of the low-frequency noise measurements on a large number of different AlGaN/GaN High Electron Mobility Transistors (HEMTs) grown on sapphire and SiC substrates have been presented. In the HEMTs grown on sapphire, the 1af noise is an order of magnitude (or more) higher than for