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Study of proton irradiation effects on AlGaN/GaN high electron mobility transistors

✍ Scribed by Ling Lv; J.G. Ma; Y.R. Cao; J.C. Zhang; W. Zhang; L. Li; S.R. Xu; X.H. Ma; X.T. Ren; Y. Hao

Book ID: 113800473
Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 861 KB
Volume: 51
Category: Article
ISSN: 0026-2714
DOI: 10.1016/j.microrel.2011.04.022

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## Abstract We present an optical study on three Al~__x__~ Ga~1–__x__~ N/GaN high electron mobility transistor structures, which were grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates, with different Al compositions using contactless electroreflectance (CER), piezorefle