High-energy proton irradiation effects on AlGaN/GaN high-electron mobility transistors
โ Scribed by B. Luo; J. W. Johnson; F. Ren; K. K. Allums; C. R. Abernathy; S. J. Pearton; R. Dwivedi; T. N. Fogarty; R. Wilkins; A. M. Dabiran; A. M. Wowchack; C. J. Polley; P. P. Chow; A. G. Baca
- Book ID
- 107452770
- Publisher
- Springer US
- Year
- 2002
- Tongue
- English
- Weight
- 352 KB
- Volume
- 31
- Category
- Article
- ISSN
- 0361-5235
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
Electrical properties of AlGaN/GaN high electron mobility transistors (HEMTs) on SiC substrates irradiated with low dose of neutron are reported. AlGaN/GaN HEMTs with 0.5 ร 100 mm 2 gate were irradiated with a dose of 2.8 ร 10 11 cm ร 2 neutrons and average energy of 9.8 MeV. 10% of drain-source cur
## Abstract AlGaN/GaN high electron mobility transistors (HEMTs) show great promise for the realization of sensors for biomolecular, pharmaceutical and medical purposes. The high sensitivity and the stability in biological solutions are great advantages of this approach. Therefore, we created a nov