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AlGaN/GaN high electron mobility transistors with implanted ohmic contacts

✍ Scribed by H.T. Wang; L.S. Tan; E.F. Chor

Book ID: 108289450
Publisher: Elsevier Science
Year: 2007
Tongue: English
Weight: 300 KB
Volume: 515
Category: Article
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2006.07.133

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## Abstract Ohmic regrowth by molecular beam epitaxy (MBE) has been investigated for metal‐face InAlN/AlN/GaN high electron mobility transistors (HEMTs) for the first time. Using SiO~2~ mask n^+^‐GaN was regrown in the source/drain region while deposition on the mask was lifted off in buffered HF a