Metal-face InAlN/AlN/GaN high electron mobility transistors with regrown ohmic contacts by molecular beam epitaxy
✍ Scribed by Guo, Jia ;Cao, Yu ;Lian, Chuanxin ;Zimmermann, Tom ;Li, Guowang ;Verma, Jai ;Gao, Xiang ;Guo, Shiping ;Saunier, Paul ;Wistey, Mark ;Jena, Debdeep ;Xing, Huili Grace
- Publisher
- John Wiley and Sons
- Year
- 2011
- Tongue
- English
- Weight
- 307 KB
- Volume
- 208
- Category
- Article
- ISSN
- 0031-8965
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✦ Synopsis
Abstract
Ohmic regrowth by molecular beam epitaxy (MBE) has been investigated for metal‐face InAlN/AlN/GaN high electron mobility transistors (HEMTs) for the first time. Using SiO~2~ mask n^+^‐GaN was regrown in the source/drain region while deposition on the mask was lifted off in buffered HF after regrowth. The lowest contact resistance measured was 0.40 ± 0.23 Ω mm by the transmission line method (TLM) in this initial study. The peak output current density of 1.25 A/mm at V~gs~ = 3 V and extrinsic transconductance of 264 mS/mm at V~ds~ = 5 V were observed in 500‐nm gate length InAlN/Al/GaN HEMTs passivated by SiN with regrowth contacts.