✦ LIBER ✦
Breakdown Voltage Enhancement of AlGaN/GaN High-Electron-Mobility Transistors via Selective-Area Growth for Ohmic Contacts over Ion Implantation
✍ Scribed by Liang Pang; Hui-Chan Seo; Patrick Chapman; Ilesanmi Adesida; Kyekyoon (Kevin) Kim
- Book ID
- 107455829
- Publisher
- Springer US
- Year
- 2010
- Tongue
- English
- Weight
- 369 KB
- Volume
- 39
- Category
- Article
- ISSN
- 0361-5235
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