𝔖 Bobbio Scriptorium
✦   LIBER   ✦

DNA-sensor based on AlGaN/GaN high electron mobility transistor

✍ Scribed by Schwarz, Stefan U. ;Linkohr, Stefanie ;Lorenz, Pierre ;Krischok, Stefan ;Nakamura, Takako ;Cimalla, Volker ;Nebel, Christoph E. ;Ambacher, Oliver

Publisher
John Wiley and Sons
Year
2011
Tongue
English
Weight
312 KB
Volume
208
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.

✦ Synopsis

Abstract

AlGaN/GaN high electron mobility transistors (HEMTs) show great promise for the realization of sensors for biomolecular, pharmaceutical and medical purposes. The high sensitivity and the stability in biological solutions are great advantages of this approach. Therefore, we created a novel HEMT‐based DNA hybridization sensor. In contrast to other comparable devices, this sensor uses a system of linker molecules to covalently bond the probe DNA to the semiconductor surface. This approach offers the possibility to adjust the density of the probe DNA and provides a highly stable connection. The device shows a clear signal when exposed to the target DNA sequence. Due to the robust attachment of the probe DNA, the double strand can be denatured without corrupting the device. Consequently, the detection of the hybridization event can be repeated several times.

πŸ“œ SIMILAR VOLUMES

AlGaN/GaN high electron mobility transis
AlGaN/GaN high electron mobility transistor sensor sensitive to ammonium ions
✍ Alifragis, Y. ;Volosirakis, A. ;Chaniotakis, N. A. ;Konstantinidis, G. ;Iliopoul πŸ“‚ Article πŸ“… 2007 πŸ› John Wiley and Sons 🌐 English βš– 127 KB

## Abstract Chemically modified Field Effect Transistor (ChemFET) sensor for ammonium (NH$ ^+\_4 $) ions was developed from AlGaN/GaN High Electron Mobility Transistor (HEMT) structures (NH$ ^+\_4 $‐ChemHEMT). The sensor consists of a HEMT device with non‐metallized gate, which was coated with a po

Optical study of the AlGaN/GaN high elec
Optical study of the AlGaN/GaN high electron mobility transistor structures
✍ Lin, D. Y. ;Lin, W. C. ;Shiu, J. J. πŸ“‚ Article πŸ“… 2006 πŸ› John Wiley and Sons 🌐 English βš– 203 KB

## Abstract We present an optical study on three Al~__x__~ Ga~1–__x__~ N/GaN high electron mobility transistor structures, which were grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates, with different Al compositions using contactless electroreflectance (CER), piezorefle

Neutron irradiation on AlGaN/GaN high el
Neutron irradiation on AlGaN/GaN high electron mobility transistors on SiC substrates
✍ Byung-Jae Kim; Hong-Yeol Kim; Jihyun Kim; Soohwan Jang πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 554 KB

Electrical properties of AlGaN/GaN high electron mobility transistors (HEMTs) on SiC substrates irradiated with low dose of neutron are reported. AlGaN/GaN HEMTs with 0.5 Γ‚ 100 mm 2 gate were irradiated with a dose of 2.8 Γ‚ 10 11 cm Γ€ 2 neutrons and average energy of 9.8 MeV. 10% of drain-source cur