## Abstract We present an optical study on three Al~__x__~ Ga~1β__x__~ N/GaN high electron mobility transistor structures, which were grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates, with different Al compositions using contactless electroreflectance (CER), piezorefle
AlGaN/GaN high electron mobility transistor structures for pressure and pH sensing
β Scribed by B. S. Kang; S. Kim; J. Kim; R. Mehandru; F. Ren; K. Baik; S. J. Pearton; B. P. Gila; C. R. Abernathy; C.-C. Pan; G.-T. Chen; J.-I. Chyi; V. Chandrasekaran; M. Sheplak; T. Nishida; S. N. G. Chu
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 86 KB
- Volume
- 2
- Category
- Article
- ISSN
- 1862-6351
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