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AlGaN/GaN high electron mobility transistors on Si(111) substrates

โœ Scribed by Chumbes, E.M.; Schremer, A.T.; Smart, J.A.; Wang, Y.; MacDonald, N.C.; Hogue, D.; Komiak, J.J.; Lichwalla, S.J.; Leoni, R.E., III.; Shealy, J.R.


Book ID
114538587
Publisher
IEEE
Year
2001
Tongue
English
Weight
166 KB
Volume
48
Category
Article
ISSN
0018-9383

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Neutron irradiation on AlGaN/GaN high el
โœ Byung-Jae Kim; Hong-Yeol Kim; Jihyun Kim; Soohwan Jang ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 554 KB

Electrical properties of AlGaN/GaN high electron mobility transistors (HEMTs) on SiC substrates irradiated with low dose of neutron are reported. AlGaN/GaN HEMTs with 0.5 ร‚ 100 mm 2 gate were irradiated with a dose of 2.8 ร‚ 10 11 cm ร€ 2 neutrons and average energy of 9.8 MeV. 10% of drain-source cur