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Hot-electron induced defect generation in AlGaN/GaN high electron mobility transistors

✍ Scribed by Rao, Hemant; Bosman, Gijs

Book ID: 118202506
Publisher: Elsevier Science
Year: 2013
Tongue: English
Weight: 434 KB
Volume: 79
Category: Article
ISSN: 0038-1101
DOI: 10.1016/j.sse.2012.06.014

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