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Under-gate defect formation in Ni-gate AlGaN/GaN high electron mobility transistors

✍ Scribed by P.G. Whiting; N.G. Rudawski; M.R. Holzworth; S.J. Pearton; K.S. Jones; L. Liu; T.S. Kang; F. Ren

No coin nor oath required. For personal study only.

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